|
KMID : 0380319920490000041
|
|
Journal of Korean Research Institute for Better Living
1992 Volume.49 No. 0 p.41 ~ p.54
|
|
|
Optical Properties of Glassy Semiconductor P-Ge-Se System
|
|
|
|
|
Abstract
|
|
|
The photostructure of amorphous semiconductor PGeSe_χ for which Se concentration is 50, 60, 70, 80, at％ were investigated.
The thin film samples were prepared by the thermal evaporation method.
After the thin film which were illuminated and annealed, the X-ray diffraction pattern, the absorption coefficient, the band gap energy and the SEM picture were studied.
When the thin film were illuminated and annealed, the aborption coefficients were found to increase and the band gap energy to decrease.
Also we could find the photodarkening and the thermaldarkening from the experimental results.
From the SEM study, the amorphous thin films, which were illuminated and annealed, were found to separate into two diffferent phases.
|
|
|
KEYWORD
|
|
|
|
|
|
FullTexts / Linksout information
|
|
|
|
|
|
Listed journal information
|
|
|
|
|